?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt march 2013 absolute maximum ratings symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage ? 20 v i c collector current @ t c = 25 o c 40 a collector current @ t c = 100 o c 20 a i cm (1) pulsed collector current @ t c = 25 o c 60 a p d maximum power dissipation @ t c = 25 o c 165 w maximum power dissipation @ t c = 100 o c 66 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c notes: 1: repetitive rating: pulse width limited by max. junction temperature thermal characteristics symbol parameter typ. max. unit r ? jc (igbt) thermal resistance, junction to case - 0.76 o c/ w r ? jc (diode) thermal resistance, junction to case - 2.51 o c/ w r ? ja thermal resistance, junction to ambient - 62.5 o c/ w FGP20N60UFD 600 v, 20 a field stop igbt g e c to-220 g c e features ? high current capability ? low saturation voltage: v ce(sat) = 1.8 v @ i c = 20 a ? high input impedance ? fast switching ? rohs compliant applications ? solar inverter, ups, welder, pfc general description using novel field stop igbt technology, fairchild ? ?s field stop igbts offer the optimum performance for solar inverter, ups, welder and pfc applications where low conduction and switch - ing losses are essential.
?2011 fairchild semiconductor corporation 2 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt package marking and ordering information device marking device package packaging type qty per tube max qty per box FGP20N60UFD FGP20N60UFDtu to-220 tube 50ea - electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 ?a 600 - - v ?bv ces ?t j temperature coefficient of breakdown voltage v ge = 0 v, i c = 250 ?? a - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0 v, t c = 25 o c - - 250 ?a v ce = v ces , v ge = 0 v, t c = 125 o c - - 1 ma i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 ?a, v ce = v ge 4.0 5.0 6.5 v v ce(sat) collector to emitter saturation voltage i c = 20 a , v ge = 15 v - 1.8 2.4 v i c = 20 a , v ge = 15 v, t c = 125 o c - 2.0 - v dynamic characteristics c ies input capacitance v ce = 30 v , v ge = 0 v, f = 1 mhz - 940 - pf c oes output capacitance - 110 - pf c res reverse transfer capacitance - 40 - pf switching characteristics t d(on) turn-on delay time v cc = 400 v, i c = 20 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 25 o c - 13 - ns t r rise time - 17 - ns t d(off) turn-off delay time - 87 - ns t f fall time - 32 64 ns e on turn-on switching loss - 0.38 - mj e off turn-off switching loss - 0.26 - mj e ts total switching loss - 0.64 - mj t d(on) turn-on delay time v cc = 400 v, i c = 20 a, r g = 10 ? , v ge = 15 v, inductive load, t c = 125 o c - 13 - ns t r rise time - 16 - ns t d(off) turn-off delay time - 92 - ns t f fall time - 63 - ns e on turn-on switching loss - 0.41 - mj e off turn-off switching loss - 0.36 - mj e ts total switching loss - 0.77 - mj q g total gate charge v ce = 400 v, i c = 20 a, v ge = 15 v - 63 - nc q ge gate to emitter charge - 7 - nc q gc gate to collector charge - 32 - nc
?2011 fairchild semiconductor corporation 3 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 10 a t c = 25 o c - 1.9 2.5 v t c = 125 o c - 1.7 - t rr diode reverse recovery time i es = 10 a, di es /dt = 200 a/?s t c = 25 o c - 35 - ns t c = 125 o c - 57 - q rr diode reverse recovery charge t c = 25 o c - 41 - nc t c = 125 o c - 96 -
?2011 fairchild semiconductor corporation 4 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current level
?2011 fairchild semiconductor corporation 5 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation voltage vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristics vs. gate resi stance
?2011 fairchild semiconductor corporation 6 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics vs. gate resistance collector current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure17. switching loss vs. figure18. turn off switching collector current soa characteristics
?2011 fairchild semiconductor corporation 7 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt typical performance characteristics figure 19. forward characteristics figure 20. reverse current figure 21. stored charge figure 22. reverse recovery time figure 23.transient thermal impedance of igbt t 1 p dm t 2
?2011 fairchild semiconductor corporation 8 www.fairchildsemi.com FGP20N60UFD rev. c0 FGP20N60UFD 600 v, 20 a field stop igbt mechanical dimensions to-220
FGP20N60UFD 600 v, 20 a field stop igbt FGP20N60UFD rev. c0 www.fairchildsemi.com 9 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap ? * bitsic? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fairchild semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in the industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i64 ? ?2011 fairchild semiconductor corporation
|
